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DATA SHEET
NPN SILICON TRANSISTOR
2SC2570A
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.
FEATURES
* Low noise and high gain * Wide dynamic range : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA : NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 15 mA
ORDERING INFORMATION
Part Number 2SC2570A 2SC2570A-T Quantity Loose products (500 pcs) Taping products (Box type) (2 500 pcs)
Remark To order evaluation samples, please contact your NEC sales office (available in 500-pcs units).
ABSOLUTE MAXIMUM RATINGS (TA = +25 C)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Ratings 25 12 3.0 70 600 150 -65 to +150 Unit V V V mA mW C C
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. P10404EJ3V0DS00 (3rd edition) Date Published November 1999 N CP(K) Printed in Japan
(c)
1980, 1999
2SC2570A
ELECTRICAL CHARACTERISTICS (TA = +25 C)
Parameter DC Current Gain Gain Bandwidth Product Output Capacitance Insertion Power Gain Noise Figure Maximum Available Gain Collector Cutoff Current Emitter Cutoff Current Symbol hFE
Note 1
Test Conditions VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC = 20 mA, f = 1.0 GHz VCE = 10 V, IC = 5 mA, f = 1.0 GHz VCE = 10 V, IC = 20 mA, f = 1.0 GHz VCB = 15 V, IE = 0 VEB = 2.0 V, IC = 0
MIN. 40 - - 8 - - - -
TYP. - 5.0 0.7 10 1.5 11.5 - -
MAX. 200 - 0.9 - 3.0 - 0.1 0.1
Unit - GHz pF dB dB dB
fT COb
Note 2
|S21e| NF
2
MAG ICBO IEBO
A A
Notes 1. Pulse Measurement: PW 350 s, Duty Cycle 2% 2. The emitter and case terminal should be connected to the guard terminal of the capacitance bridge.
2
Data Sheet P10404EJ3V0DS00
2SC2570A
TYPICAL CHARACTERISTICS (TA = +25 C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 600
Total Power Dissipation PT (mW)
free Air
400
200
0
50 100 150 Operating Ambient Temperature TA (C)
200
DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 10 V 50
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 10 V
Collector Current IC (mA)
100
DC Current Gain hFE
10 5
50
20
1 10 0.5 1 5 10 Collector Current IC (mA) 50 0.5 0.5 0.6 0.7 0.8 Base to Emitter Voltage VBE (V) 0.9
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 7 5 VCE = 10 V 15
INSERTION GAIN vs. COLLECTOR CURRENT VCE = 10 V f = 1.0 GHZ
Gain Bandwidth Product fT (GHZ)
2 1 0.5
Insertion Gain S21e 2 (dB)
10
5
0.2 0.1 0.5 0 0.5
1
10 5 Collector Current IC (mA)
50 70
1
5 10 Collector Current IC (mA)
50 70
Data Sheet P10404EJ3V0DS00
3
2SC2570A
OUTPUT AND INPUT CAPACITANCE vs. REVERSE VOLTAGE 2 f = 1.0 MHZ 6
Output Capacitance Cob (pF) Input Capacitance Cib (pF) Noise Figure NF (dB)
NOISE FIGURE vs. COLLECTOR CURRENT 7 VCE = 10 V f = 1.0 GHZ
5 4 3 2 1
1
Cib Cob
0.5
0.3
0
0.5 1 2 5 10 20 Collector to Base Voltage VCB (V) Emitter to Base Voltage VEB (V)
30
0 0.5
1
5 10 Collector Current IC (mA)
50 70
INSERTION POWER GAIN, MAXIMUM AVAILABLE GAIN vs. FREQUENCY
Insertion Power Gain S21e 2 (dB) Maximum Available Gain Gmax. (dB)
INSERTION POWER GAIN, MAXIMUM AVAILABLE GAIN vs. FREQUENCY VCE = 10 V IC = 20 mA 20 Gmax S21e 2
20 Gmax S21e 2
10
Insertion Power Gain S21e 2 (dB) Maximum Available Gain Gmax. (dB)
VCE = 10 V IC = 5 mA
10
0
0.1
0.2 0.4 0.6 0.8 1.0 Frequency f (GHZ)
2
0
0.1
0.2 0.4 0.6 0.8 1.0 Frequency f (GHZ)
2
S-PARAMETER
9 0.0 1 0.4
0.10 0.40
S-PARAMETER VCE = 10 V
9 0.0 1 0.4
0.10 0.40
0.11 0.39
100
0.12 0.38
0.13 0.37
0.14 0.36
80
90
1.0
0.15 0.35
70
1.4
0.6
1.8
0.6
0.0 0.4 6 4
0.0 0.4 6 4
2.0
0.5
WAVELENG THS TO 0 0.01 0.49 0.02 WAR 0.48 0 D 0.49 0.01 0.03 GEN 0.48 0.02WARD LOAD ER 0.47 0.47 A . S TO OF REFLECTION COEFFICIENT IN DEGRE 0.0 TOR ES 6 0.03GTH ANGLE N 0.4 4 ELE 0.4 4 V 0 -160 6 0.0 0.0WA 0.4 5 15 0 0 15 5 -
WAVELENG THS TO 0 0.01 0.49 0.02 WAR 0.48 0 D 0.49 0.01 0.03 GEN 0.48 0.02WARD LOAD ER 0.47 0.47 A . S TO OF REFLECTION COEFFICIENT IN DEGRE 0.0 TOR ES 6 0.03GTH ANGLE 0.4 4 ELEN 60 0.4 4 V 0 -1 6 0.0 0.0WA 0.4 5 15 50 0 5 -1
14 0 RE AC T AN +JX CE C Zo OM PO
14 0 RE AC T AN +JX CE C Zo O M PO
0.6
0.8
3.0
4.0
VE
VE
POSI TI
1.0
1.0
5.0
POSI TI
1.0
10
20
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8 2.0
3.0
4.0
5.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8 2.0
3.0
4.0
5.0
10
20
50
10
20
50
50
0.1
0.4
0.4
ONEN
T
MP CO CE AN CT X EA -J E R Zo TIV
0.3
0.6
0.4
0.8
0.1
0.4
1.0
ENT
1.0
0.2
S22e
4.0
0.2
CE AN CT X EA -J Zo
M CO
5 0.4 5 0.0
5 0.4 5 0.0
-1
-1
0.5
4 0.4 6 0.0
4 0.4 6 0.0
0.5
1.8
0.6
0.6
1.8
1.4
0.8
0.8
1.4
1.2
0.9
1.0
0.9
1.0
1.2
4
Data Sheet P10404EJ3V0DS00
2 0.3 8 0.1
1.6
1.6
0.7
0.7
0 -5
2.0
3 0.3 7 0.1
2.0
0 -6
4 0.3 6 0.1
0.35 0.15
-70
0.36 0.14
-80
0.37 0.13
0.4
0.2
-90
0.38 0.12
-100
0.39 0.11
0.40 0.10
-110
0.4 1 0.0 9
-1 2
0
NE GA
0.4 0.0 2 8
-1 30
0.4 0.0 3 7
2 0.3 8 0.1
0 -5
3 0.3 7 0.1
0 -6
4 0.3 6 0.1
0.35 0.15
-70
0.36 0.14
-80
0.37 0.13
0.4
0.2
-90
0.38 0.12
-100
0.39 0.11
0.40 0.10
-110
0.4 1 0.0 9
-1 2
0
NE GA
0.4
0.4
ER
40
40
TIV
3.0
0.6
3.0
0.2
0.3
4.0
1.0
0.2
PON
50
10 20
5.0
0.8
50
RESISTANCE COMPONENT R 0.2 Zo
10 20
1.5GHZ 1.0
5.0
RESISTANCE COMPONENT R 0.2 Zo
0.2
1.0
0.8
0.6
0.2
1.0 0.8 S11e 0.6
1.0 0.6 1.5GHZ S11e 0.4 1.0 0.4 0.2 0.6 .8 S22e 0.2 0 0.8
0.4
0.8
0.6
0.1
0.8
1.5GHZ
0.6
0.4
NE
NT
0.4
Z0 = 50
0.22 0.28
0.5
13
13
2.0
0
0.2
50
0
0.2
1.8
7 0.0 3 0.4
0.7
1.6
1.6
12
0
12
0
0.7
60
0.1 0.3 8 2
9 0.1 1 0.3
1.4
8 0.0 2 0.4
0.1 6 0.3 4
0.11 0.39
100
0.12 0.38
0.13 0.37
0.14 0.36
80
90
0.9
1.0
0.15 0.35
70
VCE = 10 V
0.1 6 0.3 4
60
0.9
1.2
0.8
0.8
1.2
110
0.1 0.3 7 3
IC = 5 mA
0 0.2 0 0.3
7 0.0 3 0.4
8 0.0 2 0.4
110
0.1 0.3 7 3
0.1 0.3 8 2
50
9 0.1 1 0.3
IC = 20 mA Z0 = 50
0.22 0.28
NE
NT
0.4
0.6
0.8
0 0.2 0 0.3
40
40
0.3
0.2
0.4
0.4 0.0 2 8
-1 3
0.4 0.0 3 7
0
0.4
3.0
4.0
1 0.2 9 0.2 30
1 0.2 9 0.2 30
0.3
1.0
5.0
20
20
0.2
1.5GHZ
0.23 0.27
0.23 0.27
10
20
10
10
0.1
0.24 0.26
0.24 0.26
50
0.25 0.25
0.26 0.24
0.25 0.25
0
-10
0
-10
0.26 0.24
0.27 0.23
-20
0.28 0.22
0.27 0.23
-20
0.28 0.22
-3 0
-3 0
0.2 0.2 9 1
0.2 0.2 9 1
0.3 0.2 0 0
0.3 0.2 0 0
-4 0
-4 0
0.3 0.1 1 9
0.3 0.1 1 9
2SC2570A
PACKAGE DIMENSION
TO-92 (UNIT:mm)
5.2 MAX.
0.5
2.54 1.27
1.77 MAX.
1
2
3
1. BASE 2. EMITTER 3. COLLECTOR
EIAJ JEDEC IEC
: SC-43B : TO-92 : PA33
4.2 MAX.
14.0 MIN.
5.5 MAX.
Data Sheet P10404EJ3V0DS00
5
2SC2570A
[MEMO]
6
Data Sheet P10404EJ3V0DS00
2SC2570A
[MEMO]
Data Sheet P10404EJ3V0DS00
7
2SC2570A
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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